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Low temperature through-Si via fabrication using electroless deposition

dc.contributor.authorInoue, Fumihiro
dc.contributor.authorPhilipsen, Harold
dc.contributor.authorRadisic, Alex
dc.contributor.authorArmini, Silvia
dc.contributor.authorLeunissen, Peter
dc.contributor.authorMiyake, Hiroshi
dc.contributor.authorArima, Ryohei
dc.contributor.authorShimizu, Tomohiro
dc.contributor.authorIto, Toshiaki
dc.contributor.authorSeki, Hirofumi
dc.contributor.authorShinozaki, Yuko
dc.contributor.authorYamamoto, Tomohiko
dc.contributor.authorShingubara, Shoso
dc.date.accessioned2021-10-20T11:47:12Z
dc.date.available2021-10-20T11:47:12Z
dc.date.issued2012
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20845
dc.sourceIIOimport
dc.titleLow temperature through-Si via fabrication using electroless deposition
dc.typeProceedings paper
dc.contributor.imecauthorInoue, Fumihiro
dc.contributor.imecauthorPhilipsen, Harold
dc.contributor.imecauthorRadisic, Alex
dc.contributor.imecauthorArmini, Silvia
dc.contributor.orcidimecPhilipsen, Harold::0000-0002-5029-1104
dc.contributor.orcidimecArmini, Silvia::0000-0003-0578-3422
dc.source.peerreviewyes
dc.source.beginpage1
dc.source.endpage4
dc.source.conferenceIEEE International 3D System Integration Conference - 3DIC
dc.source.conferencedate31/01/2012
dc.source.conferencelocationOsaka Japan
dc.identifier.urlhttp://dx.doi.org/10.1109/3DIC.2012.6262984
imec.availabilityPublished - imec
imec.internalnoteshttp://www.3dic-conf.jp/


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