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Carrier diffusivity in highly excited bulk SiC, GaN, and diamond crystals by optical probes

dc.contributor.authorJarasiunas, K.
dc.contributor.authorScajev, P.
dc.contributor.authorMalinauskas, T.
dc.contributor.authorKato, M.
dc.contributor.authorIvakin, E.
dc.contributor.authorNesladek, Milos
dc.contributor.authorHaenen, Ken
dc.contributor.authorOzgur, U.
dc.contributor.authorMorkoc, H.
dc.date.accessioned2021-10-20T11:53:26Z
dc.date.available2021-10-20T11:53:26Z
dc.date.issued2012
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20866
dc.sourceIIOimport
dc.titleCarrier diffusivity in highly excited bulk SiC, GaN, and diamond crystals by optical probes
dc.typeProceedings paper
dc.contributor.imecauthorNesladek, Milos
dc.contributor.imecauthorHaenen, Ken
dc.contributor.orcidimecHaenen, Ken::0000-0001-6711-7367
dc.source.peerreviewyes
dc.source.beginpage309
dc.source.endpage312
dc.source.conferenceSilicon Carbide and Related Materials 2011
dc.source.conferencedate11/09/2011
dc.source.conferencelocationCleveland, OH USA
imec.availabilityPublished - imec
imec.internalnotesSelected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials - ICSCRM 2011


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