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Process-improved RRAM cell performance and reliability and paving the way for manufacturability and scalability for high density memory application

dc.contributor.authorKar, Gouri Sankar
dc.contributor.authorFantini, Andrea
dc.contributor.authorChen, Yangyin
dc.contributor.authorParaschiv, Vasile
dc.contributor.authorGovoreanu, Bogdan
dc.contributor.authorHody, Hubert
dc.contributor.authorJossart, Nico
dc.contributor.authorTielens, Hilde
dc.contributor.authorBrus, Stephan
dc.contributor.authorRichard, Olivier
dc.contributor.authorVandeweyer, Tom
dc.contributor.authorWouters, Dirk
dc.contributor.authorAltimime, Laith
dc.contributor.authorJurczak, Gosia
dc.date.accessioned2021-10-20T12:06:38Z
dc.date.available2021-10-20T12:06:38Z
dc.date.issued2012
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20906
dc.sourceIIOimport
dc.titleProcess-improved RRAM cell performance and reliability and paving the way for manufacturability and scalability for high density memory application
dc.typeProceedings paper
dc.contributor.imecauthorKar, Gouri Sankar
dc.contributor.imecauthorFantini, Andrea
dc.contributor.imecauthorChen, Yangyin
dc.contributor.imecauthorParaschiv, Vasile
dc.contributor.imecauthorGovoreanu, Bogdan
dc.contributor.imecauthorHody, Hubert
dc.contributor.imecauthorJossart, Nico
dc.contributor.imecauthorTielens, Hilde
dc.contributor.imecauthorBrus, Stephan
dc.contributor.imecauthorRichard, Olivier
dc.contributor.imecauthorVandeweyer, Tom
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.orcidimecRichard, Olivier::0000-0002-3994-8021
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage157
dc.source.endpage158
dc.source.conferenceVLSI Symposium on VLSI Technology - VLSIT
dc.source.conferencedate12/06/2012
dc.source.conferencelocationHonolulu, HI USA
imec.availabilityPublished - open access


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