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Atomic insight into relaxation mechanism of Ge(1-x)Sn(x) using atom probe tomography

dc.contributor.authorKumar, Arul
dc.contributor.authorKambham, Ajay Kumar
dc.contributor.authorGilbert, Matthieu
dc.contributor.authorVandervorst, Wilfried
dc.date.accessioned2021-10-20T12:25:01Z
dc.date.available2021-10-20T12:25:01Z
dc.date.issued2012
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20962
dc.sourceIIOimport
dc.titleAtomic insight into relaxation mechanism of Ge(1-x)Sn(x) using atom probe tomography
dc.typeMeeting abstract
dc.contributor.imecauthorVandervorst, Wilfried
dc.source.peerreviewno
dc.source.conferenceE-MRS Spring Meeting Symposium A: Advanced Silicon Materials Research for Electronic and Photovoltaic Applications III
dc.source.conferencedate14/05/2012
dc.source.conferencelocationStrasbourg France
imec.availabilityPublished - imec


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