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Au-free, high-breakdown AlGaN/GaN MISHEMTs with low leakage, high yield and robust TDDB characteristics

dc.contributor.authorLenci, Silvia
dc.contributor.authorKang, Xuanwu
dc.contributor.authorWellekens, Dirk
dc.contributor.authorVan Hove, Marleen
dc.contributor.authorBoulay, Sanae
dc.contributor.authorStoffels, Steve
dc.contributor.authorGeens, Karen
dc.contributor.authorZahid, Mohammed
dc.contributor.authorDecoutere, Stefaan
dc.date.accessioned2021-10-20T12:36:27Z
dc.date.available2021-10-20T12:36:27Z
dc.date.issued2012
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20997
dc.sourceIIOimport
dc.titleAu-free, high-breakdown AlGaN/GaN MISHEMTs with low leakage, high yield and robust TDDB characteristics
dc.typeProceedings paper
dc.contributor.imecauthorLenci, Silvia
dc.contributor.imecauthorWellekens, Dirk
dc.contributor.imecauthorStoffels, Steve
dc.contributor.imecauthorGeens, Karen
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecGeens, Karen::0000-0003-1815-3972
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.source.peerreviewyes
dc.source.conferenceInternational Conference on Compound Semiconductor MANufacturing TECHnology - MANTECH
dc.source.conferencedate23/04/2012
dc.source.conferencelocationBoston, MA USA
imec.availabilityPublished - imec


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