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dc.contributor.authorRahal, A.
dc.contributor.authorSchreurs, Dominique
dc.contributor.authorMerza, T.
dc.contributor.authorBosisio, R. G.
dc.contributor.authorNauwelaers, Bart
dc.contributor.authorVan Rossum, Marc
dc.date.accessioned2021-09-30T09:26:14Z
dc.date.available2021-09-30T09:26:14Z
dc.date.issued1997
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/2100
dc.sourceIIOimport
dc.titleOn-wafer InP-HEMT transistor evaluation for microwave/millimeter-wave frequency doublers using six-port technique
dc.typeProceedings paper
dc.contributor.imecauthorSchreurs, Dominique
dc.contributor.imecauthorNauwelaers, Bart
dc.source.peerreviewno
dc.source.beginpage161
dc.source.conferenceProceedings Progress in Electromagnetics Research Symposium (PIERS 97); January 1997. Hong-Kong.
dc.source.conferencelocation
imec.availabilityPublished - imec


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