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Metal gates and high-k interpoly dielectrics for hybrid floating gate memory applications

dc.contributor.authorLisoni, Judit
dc.contributor.authorCacciato, Antonio
dc.contributor.authorSchram, Tom
dc.contributor.authorBreuil, Laurent
dc.contributor.authorBlomme, Pieter
dc.contributor.authorVan Houdt, Jan
dc.date.accessioned2021-10-20T12:50:33Z
dc.date.available2021-10-20T12:50:33Z
dc.date.issued2012
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/21038
dc.sourceIIOimport
dc.titleMetal gates and high-k interpoly dielectrics for hybrid floating gate memory applications
dc.typeMeeting abstract
dc.contributor.imecauthorSchram, Tom
dc.contributor.imecauthorBreuil, Laurent
dc.contributor.imecauthorBlomme, Pieter
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.orcidimecSchram, Tom::0000-0003-1533-7055
dc.contributor.orcidimecBreuil, Laurent::0000-0003-2869-1651
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.source.peerreviewno
dc.source.beginpageE1.2
dc.source.conferenceMRS Spring Symposium E: Materials and Physics of Emerging Nonvolatile Memories
dc.source.conferencedate9/04/2012
dc.source.conferencelocationSan Francisco, CA USA
imec.availabilityPublished - imec


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