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Optimized post-CMP and pre-Epi cleans to enable smooth and high quality epitaxial strained Ge growth on SiGe strain relaxed buffers

dc.contributor.authorLoo, Roger
dc.contributor.authorSouriau, Laurent
dc.contributor.authorOng, Patrick
dc.contributor.authorKenis, Karine
dc.contributor.authorRip, Jens
dc.date.accessioned2021-10-20T12:56:56Z
dc.date.available2021-10-20T12:56:56Z
dc.date.issued2012
dc.identifier.issn1662-9779
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/21056
dc.sourceIIOimport
dc.titleOptimized post-CMP and pre-Epi cleans to enable smooth and high quality epitaxial strained Ge growth on SiGe strain relaxed buffers
dc.typeJournal article
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorSouriau, Laurent
dc.contributor.imecauthorOng, Patrick
dc.contributor.imecauthorKenis, Karine
dc.contributor.imecauthorRip, Jens
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecSouriau, Laurent::0000-0002-5138-5938
dc.contributor.orcidimecOng, Patrick::0000-0002-2072-292X
dc.source.peerreviewyes
dc.source.beginpage15
dc.source.endpage18
dc.source.journalSolid State Phenomena
dc.source.volume187
imec.availabilityPublished - imec
imec.internalnotesPaper from the 10th Int. Symp. on Ultra Clean Processing of Semiconductor Surfaces (UCPSS) 2010


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