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dc.contributor.authorMahatme, Nihaar
dc.contributor.authorZhang, E.X.
dc.contributor.authorLinten, Dimitri
dc.contributor.authorGriffoni, A.
dc.contributor.authorAoulaiche, Marc
dc.contributor.authorSimoen, Eddy
dc.contributor.authorJurczak, Gosia
dc.contributor.authorBhuva, B.L.
dc.contributor.authorReed, R.A.
dc.contributor.authorSchrimpf, R.D.
dc.contributor.authorFleetwood, D.M.
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-20T13:04:40Z
dc.date.available2021-10-20T13:04:40Z
dc.date.issued2012
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/21076
dc.sourceIIOimport
dc.titleTotal-ionizing-dose effects on ultrathin-body-and-buried- oxide MOSFETs
dc.typeOral presentation
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewno
dc.source.conferenceIEEE Nuclear and Space Radiation Effects Conference - NSREC
dc.source.conferencedate16/07/2012
dc.source.conferencelocationMiami, FL USA
imec.availabilityPublished - imec


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