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High temperature storage test of GaN-based HEMTs with Ni/TiW/Au gates

dc.contributor.authorMarcon, Denis
dc.contributor.authorViaene, John
dc.contributor.authorVan Hove, Marleen
dc.contributor.authorStoffels, Steve
dc.contributor.authorDecoutere, Stefaan
dc.date.accessioned2021-10-20T13:12:18Z
dc.date.available2021-10-20T13:12:18Z
dc.date.issued2012
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/21096
dc.sourceIIOimport
dc.titleHigh temperature storage test of GaN-based HEMTs with Ni/TiW/Au gates
dc.typeMeeting abstract
dc.contributor.imecauthorMarcon, Denis
dc.contributor.imecauthorViaene, John
dc.contributor.imecauthorStoffels, Steve
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.source.peerreviewyes
dc.source.conference6th Space Agency - MOD Workshop on Wide Bandgap Semiconductors and Components
dc.source.conferencedate8/10/2012
dc.source.conferencelocationNoordwijk The Netherlands
imec.availabilityPublished - imec


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