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IV, noise and electroluminescence analysis of stress-induced percolation paths in AlGaN/GaN high electron mobility transistors

dc.contributor.authorMarko, P.
dc.contributor.authorMeneghini, M.
dc.contributor.authorBychikhin, S.
dc.contributor.authorMarcon, Denis
dc.contributor.authorMeneghesso, G.
dc.contributor.authorZanoni, E.
dc.contributor.authorPogany, D.
dc.date.accessioned2021-10-20T13:16:36Z
dc.date.available2021-10-20T13:16:36Z
dc.date.issued2012
dc.identifier.issn0026-2714
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/21108
dc.sourceIIOimport
dc.titleIV, noise and electroluminescence analysis of stress-induced percolation paths in AlGaN/GaN high electron mobility transistors
dc.typeJournal article
dc.contributor.imecauthorMarcon, Denis
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage2194
dc.source.endpage2199
dc.source.journalMicroelectronics Reliability
dc.source.issue9_10
dc.source.volume52
dc.identifier.urlhttp://www.sciencedirect.com/science/article/pii/S0026271412002272
imec.availabilityPublished - open access


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