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Modelling of low-frequency dispersive effects in GaAs and InP HEMTs

dc.contributor.authorSantarelli, A.
dc.contributor.authorVannini, G.
dc.contributor.authorBorgarino, M.
dc.contributor.authorMenozzi, R.
dc.contributor.authorBaeyens, Yves
dc.contributor.authorvan der Zanden, Koen
dc.date.accessioned2021-09-30T09:28:19Z
dc.date.available2021-09-30T09:28:19Z
dc.date.issued1997
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/2114
dc.sourceIIOimport
dc.titleModelling of low-frequency dispersive effects in GaAs and InP HEMTs
dc.typeProceedings paper
dc.source.peerreviewno
dc.source.beginpage131
dc.source.endpage134
dc.source.conferenceProceedings 5th European Gallium Arsenide and Related III-V Compounds Applications Symposium; September 1997
dc.source.conferencelocationBologna Italy
imec.availabilityPublished - imec


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