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Implant free SiGe-quantum well: from device concept to high-performing pFETs

dc.contributor.authorMitard, Jerome
dc.contributor.authorEneman, Geert
dc.contributor.authorHellings, Geert
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorVincent, Benjamin
dc.contributor.authorLoo, Roger
dc.contributor.authorBender, Hugo
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorCollaert, Nadine
dc.contributor.authorThean, Aaron
dc.date.accessioned2021-10-20T13:34:31Z
dc.date.available2021-10-20T13:34:31Z
dc.date.issued2012
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/21154
dc.sourceIIOimport
dc.titleImplant free SiGe-quantum well: from device concept to high-performing pFETs
dc.typeProceedings paper
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorHellings, Geert
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorVincent, Benjamin
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorThean, Aaron
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecHellings, Geert::0000-0002-5376-2119
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage131
dc.source.endpage143
dc.source.conferenceSiGe, Ge, and Related Compunds 5: Materials, Processing, and Devices
dc.source.conferencedate7/10/2012
dc.source.conferencelocationHonolulu, HI USA
imec.availabilityPublished - open access
imec.internalnotesECS Transactons; Vol. 50, Iss. 9


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