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Radiation damage of Si1-xGex S/D p-MOSFETs with different Ge concentrations

dc.contributor.authorNakashima, T.
dc.contributor.authorIdemoto, T.
dc.contributor.authorTsunoda, I.
dc.contributor.authorTakakura, K.
dc.contributor.authorYoneoka, M.
dc.contributor.authorOhyama, H.
dc.contributor.authorYoshino, K.
dc.contributor.authorBargallo Gonzalez, Mireia
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-20T13:48:42Z
dc.date.available2021-10-20T13:48:42Z
dc.date.issued2012
dc.identifier.issn0040-6090
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/21189
dc.sourceIIOimport
dc.titleRadiation damage of Si1-xGex S/D p-MOSFETs with different Ge concentrations
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage3337
dc.source.endpage3340
dc.source.journalThin Solid Films
dc.source.volume520
imec.availabilityPublished - open access
imec.internalnotesICSI-7 paper


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