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Gate-length dependent radiation damage in 2-MeV electron-irradiated Si1-xGexS/D p-MOSFETs

dc.contributor.authorNakashima, Toshiyuki
dc.contributor.authorIdemoto, Tatsuya
dc.contributor.authorTsunoda, Isao
dc.contributor.authorTakakura, Kenichiro
dc.contributor.authorYoneoka, Masashi
dc.contributor.authorOhyama, Hidenori
dc.contributor.authorYoshino, Kenji
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-20T13:49:07Z
dc.date.available2021-10-20T13:49:07Z
dc.date.issued2012
dc.identifier.issn0255-5476
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/21190
dc.sourceIIOimport
dc.titleGate-length dependent radiation damage in 2-MeV electron-irradiated Si1-xGexS/D p-MOSFETs
dc.typeJournal article
dc.contributor.imecauthorTakakura, Kenichiro
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage235
dc.source.endpage238
dc.source.journalMaterials Science Forum
dc.source.volume725
imec.availabilityPublished - open access
imec.internalnotesSelected, peer reviewed papers from the 14th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors, September 25-29, 2011, Miyazaki, Japan


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