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Temperature influence on nanowire tunnel field effect transistors

dc.contributor.authorNeves, F.S.
dc.contributor.authorMartino, M.D.V.
dc.contributor.authorAgopian, P.G.D.
dc.contributor.authorMartino, J.A.
dc.contributor.authorRooyackers, Rita
dc.contributor.authorLeonelli, Daniele
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-20T13:51:08Z
dc.date.available2021-10-20T13:51:08Z
dc.date.issued2012
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/21195
dc.sourceIIOimport
dc.titleTemperature influence on nanowire tunnel field effect transistors
dc.typeProceedings paper
dc.contributor.imecauthorLeonelli, Daniele
dc.source.peerreviewyes
dc.source.beginpage223
dc.source.endpage230
dc.source.conferenceProceedings of the 27th Symposium on Microelectronics Technology and Devices - SBMicro
dc.source.conferencedate30/08/2012
dc.source.conferencelocationBrasilia Brasil
imec.availabilityPublished - imec
imec.internalnotesECS Transactions; Vol. 49, Issue 1


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