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Correlation between interface traps and paramagnetic defects in c-Si/a-Si:H heterojunctions

dc.contributor.authorNguyen Hoang, Thoan
dc.contributor.authorJivanescu, Mihaela
dc.contributor.authorO'Sullivan, Barry
dc.contributor.authorPantisano, Luigi
dc.contributor.authorGordon, Ivan
dc.contributor.authorAfanas'ev, Valery
dc.contributor.authorStesmans, Andre
dc.date.accessioned2021-10-20T13:52:23Z
dc.date.available2021-10-20T13:52:23Z
dc.date.issued2012
dc.identifier.issn0003-6951
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/21198
dc.sourceIIOimport
dc.titleCorrelation between interface traps and paramagnetic defects in c-Si/a-Si:H heterojunctions
dc.typeJournal article
dc.contributor.imecauthorO'Sullivan, Barry
dc.contributor.imecauthorGordon, Ivan
dc.contributor.imecauthorStesmans, Andre
dc.contributor.orcidimecO'Sullivan, Barry::0000-0002-9036-8241
dc.contributor.orcidimecGordon, Ivan::0000-0002-0713-8403
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage142101
dc.source.journalApplied Physics Letters
dc.source.issue14
dc.source.volume100
imec.availabilityPublished - open access


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