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In-Situ HCl etching of InP in shallow-trench-isolated structures

dc.contributor.authorOrzali, Tommaso
dc.contributor.authorWang, G.
dc.contributor.authorWaldron, Niamh
dc.contributor.authorMerckling, Clement
dc.contributor.authorRichard, Olivier
dc.contributor.authorBender, Hugo
dc.contributor.authorWang, Wei-E
dc.contributor.authorCaymax, Matty
dc.date.accessioned2021-10-20T14:07:58Z
dc.date.available2021-10-20T14:07:58Z
dc.date.issued2012
dc.identifier.issn0013-4651
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/21237
dc.sourceIIOimport
dc.titleIn-Situ HCl etching of InP in shallow-trench-isolated structures
dc.typeJournal article
dc.contributor.imecauthorWaldron, Niamh
dc.contributor.imecauthorMerckling, Clement
dc.contributor.imecauthorRichard, Olivier
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecMerckling, Clement::0000-0003-3084-2543
dc.contributor.orcidimecRichard, Olivier::0000-0002-3994-8021
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpageH455
dc.source.endpageH459
dc.source.journalJournal of the Electrochemical Society
dc.source.issue4
dc.source.volume159
imec.availabilityPublished - open access


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