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Atomic and electrical characterisation of amorphous silicon passivation layers

dc.contributor.authorO'Sullivan, Barry
dc.contributor.authorThoan, N.H.
dc.contributor.authorJivanescu, M.
dc.contributor.authorPantisano, Luigi
dc.contributor.authorBearda, Twan
dc.contributor.authorDross, Frederic
dc.contributor.authorGordon, Ivan
dc.contributor.authorAfanasiev, Valeri
dc.contributor.authorStesmans, Andre
dc.contributor.authorPoortmans, Jef
dc.date.accessioned2021-10-20T14:08:49Z
dc.date.available2021-10-20T14:08:49Z
dc.date.issued2012
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/21239
dc.sourceIIOimport
dc.titleAtomic and electrical characterisation of amorphous silicon passivation layers
dc.typeProceedings paper
dc.contributor.imecauthorO'Sullivan, Barry
dc.contributor.imecauthorGordon, Ivan
dc.contributor.imecauthorAfanasiev, Valeri
dc.contributor.imecauthorStesmans, Andre
dc.contributor.imecauthorPoortmans, Jef
dc.contributor.orcidimecO'Sullivan, Barry::0000-0002-9036-8241
dc.contributor.orcidimecGordon, Ivan::0000-0002-0713-8403
dc.contributor.orcidimecPoortmans, Jef::0000-0003-2077-2545
dc.source.peerreviewyes
dc.source.beginpage185
dc.source.endpage190
dc.source.conferenceProceedings of the 2nd International Conference on Crystalline Silicon Photovoltaics - Silicon PV
dc.source.conferencedate3/04/2012
dc.source.conferencelocationLeuven Belgium
imec.availabilityPublished - imec
imec.internalnotesEnergy Procedia; Vol. 27


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