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Lateral versus interdigitated diode design for 10 Gb/s Low-voltage low-loss silicon ring modulators

dc.contributor.authorPantouvaki, Marianna
dc.contributor.authorYu, Hui
dc.contributor.authorVerheyen, Peter
dc.contributor.authorLepage, Guy
dc.contributor.authorBogaerts, Wim
dc.contributor.authorMoelants, Myriam
dc.contributor.authorWouters, Johan M. D.
dc.contributor.authorRadisic, Dunja
dc.contributor.authorVandervorst, Alain
dc.contributor.authorAbsil, Philippe
dc.contributor.authorVan Campenhout, Joris
dc.date.accessioned2021-10-20T14:14:36Z
dc.date.available2021-10-20T14:14:36Z
dc.date.issued2012
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/21253
dc.sourceIIOimport
dc.titleLateral versus interdigitated diode design for 10 Gb/s Low-voltage low-loss silicon ring modulators
dc.typeProceedings paper
dc.contributor.imecauthorPantouvaki, Marianna
dc.contributor.imecauthorVerheyen, Peter
dc.contributor.imecauthorLepage, Guy
dc.contributor.imecauthorBogaerts, Wim
dc.contributor.imecauthorMoelants, Myriam
dc.contributor.imecauthorWouters, Johan M. D.
dc.contributor.imecauthorRadisic, Dunja
dc.contributor.imecauthorAbsil, Philippe
dc.contributor.imecauthorVan Campenhout, Joris
dc.contributor.orcidimecBogaerts, Wim::0000-0003-1112-8950
dc.contributor.orcidimecVan Campenhout, Joris::0000-0003-0778-2669
dc.source.peerreviewyes
dc.source.beginpageTUC 4
dc.source.conferenceIEEE Optical Interconnects Conference
dc.source.conferencedate20/05/2012
dc.source.conferencelocationSante Fe, NM USA
imec.availabilityPublished - imec


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