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Atomic layer deposition process of Hf-based high-k gate dielectric film on Si substrate

dc.contributor.authorPark, Tae Joo
dc.contributor.authorCho, Moon Ju
dc.contributor.authorJung, Hyung-Suk
dc.contributor.authorHwang, cheol seong
dc.date.accessioned2021-10-20T14:15:46Z
dc.date.available2021-10-20T14:15:46Z
dc.date.issued2012-08
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/21256
dc.sourceIIOimport
dc.titleAtomic layer deposition process of Hf-based high-k gate dielectric film on Si substrate
dc.typeBook chapter
dc.source.peerreviewno
dc.source.beginpage77
dc.source.bookHigh-k Gate Dielectrics for CMOS Technology
dc.source.endpage110
dc.identifier.urlhttp://eu.wiley.com/WileyCDA/WileyTitle/productCd-3527330321.html
imec.availabilityPublished - imec
imec.internalnotesChapter 4


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