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Direct physical evidence of mechanisms of leakage and equivalent oxide thickness reduction in metal-insulator-metal capacitors based on RuOx/TiOx/SrxTiyOz/TiN stacks

dc.contributor.authorPawlak, Malgorzata
dc.contributor.authorSwerts, Johan
dc.contributor.authorPopovici, Mihaela Ioana
dc.contributor.authorKaczer, Ben
dc.contributor.authorKim, Min-Soo
dc.contributor.authorWang, Wan-Chih
dc.contributor.authorTomida, Kazuyuki
dc.contributor.authorGovoreanu, Bogdan
dc.contributor.authorDelmotte, Joris
dc.contributor.authorAfanas'ev, Valeri
dc.contributor.authorSchaekers, Marc
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorKittl, Jorge
dc.date.accessioned2021-10-20T14:22:16Z
dc.date.available2021-10-20T14:22:16Z
dc.date.issued2012
dc.identifier.issn0003-6951
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/21272
dc.sourceIIOimport
dc.titleDirect physical evidence of mechanisms of leakage and equivalent oxide thickness reduction in metal-insulator-metal capacitors based on RuOx/TiOx/SrxTiyOz/TiN stacks
dc.typeJournal article
dc.contributor.imecauthorSwerts, Johan
dc.contributor.imecauthorPopovici, Mihaela Ioana
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorKim, Min-Soo
dc.contributor.imecauthorTomida, Kazuyuki
dc.contributor.imecauthorGovoreanu, Bogdan
dc.contributor.imecauthorSchaekers, Marc
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecKim, Min-Soo::0000-0003-0211-0847
dc.contributor.orcidimecSchaekers, Marc::0000-0002-1496-7816
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage42901
dc.source.journalApplied Physics Letters
dc.source.issue4
dc.source.volume101
dc.identifier.urlhttp://dx.doi.org/10.1063/1.4737871
imec.availabilityPublished - open access


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