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200mm CVD grown Si/SiGe resonant interband tunnel diodes optimized for high peak-to-valley current ratios

dc.contributor.authorRamesh, Anisha
dc.contributor.authorBerger, Paul
dc.contributor.authorDouhard, Bastien
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorLoo, Roger
dc.date.accessioned2021-10-20T15:05:54Z
dc.date.available2021-10-20T15:05:54Z
dc.date.issued2012-06
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/21375
dc.sourceIIOimport
dc.title200mm CVD grown Si/SiGe resonant interband tunnel diodes optimized for high peak-to-valley current ratios
dc.typeMeeting abstract
dc.contributor.imecauthorDouhard, Bastien
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.source.peerreviewyes
dc.source.beginpage106
dc.source.endpage107
dc.source.conference6th International Silicon Technology and Device Meeting
dc.source.conferencedate4/06/2012
dc.source.conferencelocationBerkeley, CA USA
imec.availabilityPublished - imec


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