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Boron delta-doping dependence on Si/SiGe resonant interband tunneling diodes grown by chemical vapor deposition

dc.contributor.authorRamesh, Anisha
dc.contributor.authorGrowden, Tyler
dc.contributor.authorBerger, Paul R.
dc.contributor.authorLoo, Roger
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorDouhard, Bastien
dc.contributor.authorCaymax, Matty
dc.date.accessioned2021-10-20T15:06:44Z
dc.date.available2021-10-20T15:06:44Z
dc.date.issued2012-03
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/21377
dc.sourceIIOimport
dc.titleBoron delta-doping dependence on Si/SiGe resonant interband tunneling diodes grown by chemical vapor deposition
dc.typeJournal article
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorDouhard, Bastien
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.source.peerreviewyes
dc.source.beginpage602
dc.source.endpage609
dc.source.journalIEEE Transactions on Electron Devices
dc.source.issue3
dc.source.volume59
imec.availabilityPublished - imec


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