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Deep levels in heat-treated and 252Cf-irradiated P-type silicon substrates with different oxygen content

dc.contributor.authorKaniava, Arvydas
dc.contributor.authorVanhellemont, Jan
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-09-29T12:42:38Z
dc.date.available2021-09-29T12:42:38Z
dc.date.issued1994
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/213
dc.sourceIIOimport
dc.titleDeep levels in heat-treated and 252Cf-irradiated P-type silicon substrates with different oxygen content
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewno
dc.source.beginpage1474
dc.source.endpage1479
dc.source.journalSemiconductor Science and Technology
dc.source.volume9
imec.availabilityPublished - imec


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