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Larger intrinsic voltage gain achieved with UTBOX SOI devices and thin silicon film

dc.contributor.authorRodrigues, M.
dc.contributor.authorGaleti, M.
dc.contributor.authorMartino, J.A.
dc.contributor.authorCollaert, Nadine
dc.contributor.authorSimoen, Eddy
dc.contributor.authorAoulaiche, Marc
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-20T15:22:59Z
dc.date.available2021-10-20T15:22:59Z
dc.date.issued2012
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/21412
dc.sourceIIOimport
dc.titleLarger intrinsic voltage gain achieved with UTBOX SOI devices and thin silicon film
dc.typeProceedings paper
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewyes
dc.source.beginpage25
dc.source.endpage31
dc.source.conferenceChina Semiconductor Technology International Conference - CSTIC
dc.source.conferencedate18/03/2012
dc.source.conferencelocationShanghai China
imec.availabilityPublished - imec
imec.internalnotesECS Transactions; Vol. 44, Issue 1


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