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Strain-induced semiconductor to metal transition in the two-dimensional honeycomb structure of MoS2
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Authors
Scalise, Emilio
;
Houssa, Michel
;
Pourtois, Geoffrey
;
Afanasiev, Valeri
;
Stesmans, Andre
ISSN
1998-0124
Issue
1
Journal
Nano Research
Volume
5
Title
Strain-induced semiconductor to metal transition in the two-dimensional honeycomb structure of MoS2
Publication type
Journal article
Embargo date
9999-12-31
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