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Strain-induced semiconductor to metal transition in the two-dimensional honeycomb structure of MoS2

dc.contributor.authorScalise, Emilio
dc.contributor.authorHoussa, Michel
dc.contributor.authorPourtois, Geoffrey
dc.contributor.authorAfanasiev, Valeri
dc.contributor.authorStesmans, Andre
dc.date.accessioned2021-10-20T15:46:23Z
dc.date.available2021-10-20T15:46:23Z
dc.date.issued2012
dc.identifier.issn1998-0124
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/21463
dc.sourceIIOimport
dc.titleStrain-induced semiconductor to metal transition in the two-dimensional honeycomb structure of MoS2
dc.typeJournal article
dc.contributor.imecauthorHoussa, Michel
dc.contributor.imecauthorPourtois, Geoffrey
dc.contributor.imecauthorAfanasiev, Valeri
dc.contributor.imecauthorStesmans, Andre
dc.contributor.orcidimecHoussa, Michel::0000-0003-1844-3515
dc.contributor.orcidimecPourtois, Geoffrey::0000-0003-2597-8534
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage43
dc.source.endpage48
dc.source.journalNano Research
dc.source.issue1
dc.source.volume5
imec.availabilityPublished - open access


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