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Two-dimensional carrier mapping in nanowire-based heterojunction tunnel-field effect transistors using scanning spreading resistance microscopy

dc.contributor.authorSchulze, Andreas
dc.contributor.authorHantschel, Thomas
dc.contributor.authorEyben, Pierre
dc.contributor.authorVerhulst, Anne
dc.contributor.authorRooyackers, Rita
dc.contributor.authorVandooren, Anne
dc.contributor.authorVandervorst, Wilfried
dc.date.accessioned2021-10-20T15:55:13Z
dc.date.available2021-10-20T15:55:13Z
dc.date.issued2012
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/21482
dc.sourceIIOimport
dc.titleTwo-dimensional carrier mapping in nanowire-based heterojunction tunnel-field effect transistors using scanning spreading resistance microscopy
dc.typeMeeting abstract
dc.contributor.imecauthorHantschel, Thomas
dc.contributor.imecauthorEyben, Pierre
dc.contributor.imecauthorVerhulst, Anne
dc.contributor.imecauthorVandooren, Anne
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.orcidimecHantschel, Thomas::0000-0001-9476-4084
dc.contributor.orcidimecVerhulst, Anne::0000-0002-3742-9017
dc.contributor.orcidimecVandooren, Anne::0000-0002-2412-0176
dc.source.peerreviewno
dc.source.conferenceE-MRS Fall Meeting Symp. J: High-Resolution Electrical and Chemical Characteriz. of Nanometer-Scale Organic and Inorg. Devices
dc.source.conferencedate17/09/2012
dc.source.conferencelocationWarsaw Poland
imec.availabilityPublished - imec


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