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Empirical model for the low-frequency noise of hot-carrier degraded submicron LDD MOSFET's

dc.contributor.authorSimoen, Eddy
dc.contributor.authorVasina, Petr
dc.contributor.authorSikula, J.
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-09-30T09:33:46Z
dc.date.available2021-09-30T09:33:46Z
dc.date.issued1997
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/2149
dc.sourceIIOimport
dc.titleEmpirical model for the low-frequency noise of hot-carrier degraded submicron LDD MOSFET's
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage480
dc.source.endpage482
dc.source.journalIEEE Electron Device Letters
dc.source.issue10
dc.source.volume18
imec.availabilityPublished - open access


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