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Low-frequency noise assessment of the oxide quality of gate-last high-k pMOSFETS

dc.contributor.authorSimoen, Eddy
dc.contributor.authorVeloso, Anabela
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-20T16:11:42Z
dc.date.available2021-10-20T16:11:42Z
dc.date.issued2012
dc.identifier.issn0741-3106
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/21517
dc.sourceIIOimport
dc.titleLow-frequency noise assessment of the oxide quality of gate-last high-k pMOSFETS
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorVeloso, Anabela
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage1366
dc.source.endpage1368
dc.source.journalIEEE Electron Device Letters
dc.source.issue10
dc.source.volume33
dc.identifier.urlhttp://ieeexplore.ieee.org/document/6296681/
imec.availabilityPublished - open access


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