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2kV breakdown voltage GaN-on-Si DHFETs with sub-micron thick AlGaN Buffer

dc.contributor.authorSrivastava, Puneet
dc.contributor.authorCheng, Kai
dc.contributor.authorDas, Jo
dc.contributor.authorVan Hove, Marleen
dc.contributor.authorLeys, Maarten
dc.contributor.authorMarcon, Denis
dc.contributor.authorVisalli, Domenica
dc.contributor.authorGeens, Karen
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorMertens, Robert
dc.contributor.authorBorghs, Gustaaf
dc.date.accessioned2021-10-20T16:24:40Z
dc.date.available2021-10-20T16:24:40Z
dc.date.issued2012
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/21545
dc.sourceIIOimport
dc.title2kV breakdown voltage GaN-on-Si DHFETs with sub-micron thick AlGaN Buffer
dc.typeProceedings paper
dc.contributor.imecauthorMarcon, Denis
dc.contributor.imecauthorGeens, Karen
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.imecauthorMertens, Robert
dc.contributor.imecauthorBorghs, Gustaaf
dc.contributor.orcidimecGeens, Karen::0000-0003-1815-3972
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.source.peerreviewyes
dc.source.conferenceInternational Conference on Compound Semiconductor MANufacturing TECHnology - MANTECH
dc.source.conferencedate23/04/2012
dc.source.conferencelocationBoston, MA USA
imec.availabilityPublished - imec


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