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Stability evaluation of insulated gate AlGaN/GaN power switching devices under heavy ion irradiation

dc.contributor.authorStoffels, Steve
dc.contributor.authorMelotte, Michelle
dc.contributor.authorMagali, Haussy
dc.contributor.authorVenegas, Rafael
dc.contributor.authorMarcon, Denis
dc.contributor.authorVan Hove, Marleen
dc.contributor.authorDecoutere, Stefaan
dc.date.accessioned2021-10-20T16:31:53Z
dc.date.available2021-10-20T16:31:53Z
dc.date.issued2012
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/21560
dc.sourceIIOimport
dc.titleStability evaluation of insulated gate AlGaN/GaN power switching devices under heavy ion irradiation
dc.typeProceedings paper
dc.contributor.imecauthorStoffels, Steve
dc.contributor.imecauthorMarcon, Denis
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.source.peerreviewyes
dc.source.conferenceRadiation and its Effects on Components and Systems Conference - RADECS
dc.source.conferencedate24/09/2012
dc.source.conferencelocationBiarritz France
imec.availabilityPublished - imec


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