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Formation mechanism of chemically etched porous silicon

dc.contributor.authorStalmans, Lieven
dc.contributor.authorVazsonyi, Eva
dc.contributor.authorBender, Hugo
dc.contributor.authorSzilagyi, E.
dc.contributor.authorJalsovsky, G.
dc.contributor.authorHorvath, Z. E.
dc.contributor.authorPetrik, P.
dc.contributor.authorPoortmans, Jef
dc.contributor.authorNijs, Johan
dc.date.accessioned2021-09-30T09:35:18Z
dc.date.available2021-09-30T09:35:18Z
dc.date.issued1997
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/2157
dc.sourceIIOimport
dc.titleFormation mechanism of chemically etched porous silicon
dc.typeOral presentation
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorPoortmans, Jef
dc.contributor.orcidimecPoortmans, Jef::0000-0003-2077-2545
dc.source.peerreviewno
dc.source.conference17th International Conference on Amorphous and Microcrystalline Semiconductors; August 25-29, 1997; Budapest, Hungary.
dc.source.conferencelocation
imec.availabilityPublished - imec


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