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Investigation of the Si doping effect in b-Ga2O3 films by co-sputtering of gallium oxide and Si

dc.contributor.authorTakakura, K.
dc.contributor.authorFunasaki, S.
dc.contributor.authorTsunoda, I.
dc.contributor.authorOhyama, H.
dc.contributor.authorTakeuchi, D.
dc.contributor.authorNakashima, T.
dc.contributor.authorShibuya, M.
dc.contributor.authorMurakami, K.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-20T16:42:05Z
dc.date.available2021-10-20T16:42:05Z
dc.date.issued2012
dc.identifier.issn0921-4526
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/21581
dc.sourceIIOimport
dc.titleInvestigation of the Si doping effect in b-Ga2O3 films by co-sputtering of gallium oxide and Si
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage2900
dc.source.endpage2902
dc.source.journalPhysica B: Condensed Matter
dc.source.issue15
dc.source.volume407
imec.availabilityPublished - open access
imec.internalnotesICDS 2011 paper


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