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Photoluminescence characterization of III-V materials epitaxially grown on silicon

dc.contributor.authorTian, Bin
dc.contributor.authorPaladugu, Mohan
dc.contributor.authorWang, Zhechao
dc.contributor.authorPantouvaki, Marianna
dc.contributor.authorVan Thourhout, Dries
dc.date.accessioned2021-10-20T16:54:41Z
dc.date.available2021-10-20T16:54:41Z
dc.date.issued2012
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/21607
dc.sourceIIOimport
dc.titlePhotoluminescence characterization of III-V materials epitaxially grown on silicon
dc.typeProceedings paper
dc.contributor.imecauthorPantouvaki, Marianna
dc.contributor.imecauthorVan Thourhout, Dries
dc.contributor.orcidimecVan Thourhout, Dries::0000-0003-0111-431X
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage247
dc.source.endpage250
dc.source.conferenceProceedings of the Annual Symposium of the IEEE Photonics Society Benelux Chapter
dc.source.conferencedate29/11/2012
dc.source.conferencelocationMons Belgium
imec.availabilityPublished - open access


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