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Correlation of single trapping and detrapping effects in drain and gate currents of nanoscaled nFETs and pFETs

dc.contributor.authorToledano Luque, Maria
dc.contributor.authorKaczer, Ben
dc.contributor.authorSimoen, Eddy
dc.contributor.authorDegraeve, Robin
dc.contributor.authorFranco, Jacopo
dc.contributor.authorRoussel, Philippe
dc.contributor.authorGrasser, Tibor
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-20T17:01:18Z
dc.date.available2021-10-20T17:01:18Z
dc.date.issued2012
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/21620
dc.sourceIIOimport
dc.titleCorrelation of single trapping and detrapping effects in drain and gate currents of nanoscaled nFETs and pFETs
dc.typeProceedings paper
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.imecauthorRoussel, Philippe
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimecRoussel, Philippe::0000-0002-0402-8225
dc.source.peerreviewyes
dc.source.beginpageXT.5.1
dc.source.endpageXT.5.6
dc.source.conferenceIEEE International Reliability Physics Symposium - IRPS
dc.source.conferencedate15/04/2012
dc.source.conferencelocationAnaheim, CA USA
imec.availabilityPublished - imec


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