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Local compressive stress generation in electron irradiated boron-doped Si0.75Ge0.25/Si devices

dc.contributor.authorTsunoda, Isao
dc.contributor.authorNakashima, Toshiyuki
dc.contributor.authorNaka, Noboyuki
dc.contributor.authorIdemoto, Tatsuya
dc.contributor.authorYoneoka, Masahi
dc.contributor.authorTakakura, Kenichiro
dc.contributor.authorYoshino, Kenji
dc.contributor.authorBargallo Gonzalez, Mireia
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.authorOhyama, Hidenori
dc.date.accessioned2021-10-20T17:15:42Z
dc.date.available2021-10-20T17:15:42Z
dc.date.issued2012
dc.identifier.issn1610-1634
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/21648
dc.sourceIIOimport
dc.titleLocal compressive stress generation in electron irradiated boron-doped Si0.75Ge0.25/Si devices
dc.typeJournal article
dc.contributor.imecauthorTakakura, Kenichiro
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage2058
dc.source.endpage2061
dc.source.journalPhysica Status Solidi C
dc.source.issue10_11
dc.source.volume9
imec.availabilityPublished - open access
imec.internalnotesSpecial issue E-MRS Spring Meeting 2012 Symposium A


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