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Selective growth of strained Ge channel for high mobility Ge pllanar and Fin p-MOSFET

dc.contributor.authorVincent, Benjamin
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorRichard, Olivier
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorBender, Hugo
dc.contributor.authorLoo, Roger
dc.contributor.authorCaymax, Matty
dc.contributor.authorThean, Aaron
dc.date.accessioned2021-10-20T18:36:37Z
dc.date.available2021-10-20T18:36:37Z
dc.date.issued2012
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/21806
dc.sourceIIOimport
dc.titleSelective growth of strained Ge channel for high mobility Ge pllanar and Fin p-MOSFET
dc.typeMeeting abstract
dc.contributor.imecauthorVincent, Benjamin
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorRichard, Olivier
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorThean, Aaron
dc.contributor.orcidimecRichard, Olivier::0000-0002-3994-8021
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage3105
dc.source.conferenceECS Fall Meeting Symposium: SiGE, Ge, and Related Compounds
dc.source.conferencedate8/12/2012
dc.source.conferencelocationHonolulu, HI USA
imec.availabilityPublished - open access
imec.internalnotesECS Meeting Abstracts; Vol. MA2012-02


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