dc.contributor.author | Waldron, Niamh | |
dc.contributor.author | Wang, Gang | |
dc.contributor.author | Nguyen, Ngoc Duy | |
dc.contributor.author | Orzali, Tommaso | |
dc.contributor.author | Merckling, Clement | |
dc.contributor.author | Brammertz, Guy | |
dc.contributor.author | Ong, Patrick | |
dc.contributor.author | Winderickx, Gillis | |
dc.contributor.author | Hellings, Geert | |
dc.contributor.author | Eneman, Geert | |
dc.contributor.author | Caymax, Matty | |
dc.contributor.author | Meuris, Marc | |
dc.contributor.author | Horiguchi, Naoto | |
dc.contributor.author | Thean, Aaron | |
dc.date.accessioned | 2021-10-20T18:46:46Z | |
dc.date.available | 2021-10-20T18:46:46Z | |
dc.date.issued | 2012 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/21827 | |
dc.source | IIOimport | |
dc.title | Integration of InGaAs channel n-MOS devices on 200mm Si wafers using the aspect-ratio-trapping technique | |
dc.type | Proceedings paper | |
dc.contributor.imecauthor | Waldron, Niamh | |
dc.contributor.imecauthor | Merckling, Clement | |
dc.contributor.imecauthor | Brammertz, Guy | |
dc.contributor.imecauthor | Ong, Patrick | |
dc.contributor.imecauthor | Winderickx, Gillis | |
dc.contributor.imecauthor | Hellings, Geert | |
dc.contributor.imecauthor | Eneman, Geert | |
dc.contributor.imecauthor | Caymax, Matty | |
dc.contributor.imecauthor | Meuris, Marc | |
dc.contributor.imecauthor | Horiguchi, Naoto | |
dc.contributor.imecauthor | Thean, Aaron | |
dc.contributor.orcidimec | Merckling, Clement::0000-0003-3084-2543 | |
dc.contributor.orcidimec | Brammertz, Guy::0000-0003-1404-7339 | |
dc.contributor.orcidimec | Ong, Patrick::0000-0002-2072-292X | |
dc.contributor.orcidimec | Hellings, Geert::0000-0002-5376-2119 | |
dc.contributor.orcidimec | Eneman, Geert::0000-0002-5849-3384 | |
dc.contributor.orcidimec | Meuris, Marc::0000-0002-9580-6810 | |
dc.contributor.orcidimec | Horiguchi, Naoto::0000-0001-5490-0416 | |
dc.date.embargo | 9999-12-31 | |
dc.source.peerreview | yes | |
dc.source.beginpage | 115 | |
dc.source.endpage | 128 | |
dc.source.conference | Graphene, Ge/III-V, Nanowires, and Emerging Materials for Post-CMOS Applications 4 | |
dc.source.conferencedate | 6/05/2012 | |
dc.source.conferencelocation | Seattle, WA USA | |
imec.availability | Published - open access | |
imec.internalnotes | ECS Transactions; Vol. 45, Issue 4 | |