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Integration of InGaAs channel n-MOS devices on 200mm Si wafers using the aspect-ratio-trapping technique

dc.contributor.authorWaldron, Niamh
dc.contributor.authorWang, Gang
dc.contributor.authorNguyen, Ngoc Duy
dc.contributor.authorOrzali, Tommaso
dc.contributor.authorMerckling, Clement
dc.contributor.authorBrammertz, Guy
dc.contributor.authorOng, Patrick
dc.contributor.authorWinderickx, Gillis
dc.contributor.authorHellings, Geert
dc.contributor.authorEneman, Geert
dc.contributor.authorCaymax, Matty
dc.contributor.authorMeuris, Marc
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorThean, Aaron
dc.date.accessioned2021-10-20T18:46:46Z
dc.date.available2021-10-20T18:46:46Z
dc.date.issued2012
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/21827
dc.sourceIIOimport
dc.titleIntegration of InGaAs channel n-MOS devices on 200mm Si wafers using the aspect-ratio-trapping technique
dc.typeProceedings paper
dc.contributor.imecauthorWaldron, Niamh
dc.contributor.imecauthorMerckling, Clement
dc.contributor.imecauthorBrammertz, Guy
dc.contributor.imecauthorOng, Patrick
dc.contributor.imecauthorWinderickx, Gillis
dc.contributor.imecauthorHellings, Geert
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorMeuris, Marc
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.imecauthorThean, Aaron
dc.contributor.orcidimecMerckling, Clement::0000-0003-3084-2543
dc.contributor.orcidimecBrammertz, Guy::0000-0003-1404-7339
dc.contributor.orcidimecOng, Patrick::0000-0002-2072-292X
dc.contributor.orcidimecHellings, Geert::0000-0002-5376-2119
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage115
dc.source.endpage128
dc.source.conferenceGraphene, Ge/III-V, Nanowires, and Emerging Materials for Post-CMOS Applications 4
dc.source.conferencedate6/05/2012
dc.source.conferencelocationSeattle, WA USA
imec.availabilityPublished - open access
imec.internalnotesECS Transactions; Vol. 45, Issue 4


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