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High temperature behaviour of GaN-on-Si high power MISHEMT devices

dc.contributor.authorWellekens, Dirk
dc.contributor.authorVenegas, Rafael
dc.contributor.authorKang, Xuanwu
dc.contributor.authorZahid, Mohammed
dc.contributor.authorWu, Tian-Li
dc.contributor.authorMarcon, Denis
dc.contributor.authorSrivastava, Puneet
dc.contributor.authorVan Hove, Marleen
dc.contributor.authorDecoutere, Stefaan
dc.date.accessioned2021-10-20T18:55:52Z
dc.date.available2021-10-20T18:55:52Z
dc.date.issued2012
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/21844
dc.sourceIIOimport
dc.titleHigh temperature behaviour of GaN-on-Si high power MISHEMT devices
dc.typeProceedings paper
dc.contributor.imecauthorWellekens, Dirk
dc.contributor.imecauthorMarcon, Denis
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.source.peerreviewyes
dc.source.beginpage302
dc.source.endpage305
dc.source.conference42nd European Solid-State Device Research Conference - ESSDERC
dc.source.conferencedate17/09/2012
dc.source.conferencelocationBordeaux France
imec.availabilityPublished - imec


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