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dc.contributor.authorXie, Qi
dc.contributor.authorDeng, Shaoren
dc.contributor.authorSchaekers, Marc
dc.contributor.authorLin, Dennis
dc.contributor.authorCaymax, Matty
dc.contributor.authorDelabie, Annelies
dc.contributor.authorQu, Xin-Ping
dc.contributor.authorJiang, Yu-long
dc.contributor.authorDeduytsche, Davy
dc.contributor.authorDetavernier, Christophe
dc.date.accessioned2021-10-20T19:06:52Z
dc.date.available2021-10-20T19:06:52Z
dc.date.issued2012
dc.identifier.issn0268-1242
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/21865
dc.sourceIIOimport
dc.titleGermanium surface passivation and atomic layer deposition of high- k dielectrics - a tutorial review on Ge-based MOS capacitors
dc.typeJournal article
dc.contributor.imecauthorXie, Qi
dc.contributor.imecauthorDeng, Shaoren
dc.contributor.imecauthorSchaekers, Marc
dc.contributor.imecauthorLin, Dennis
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorDelabie, Annelies
dc.contributor.orcidimecSchaekers, Marc::0000-0002-1496-7816
dc.source.peerreviewyes
dc.source.beginpage74012
dc.source.journalSemiconductor Science and Technology
dc.source.issue7
dc.source.volume27
imec.availabilityPublished - imec


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