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Arsenic-doped Ge-spiked monoemitter SiGe:C heterojunction bipolar transistors by low-temperature trisilane based chemical vapor deposition

dc.contributor.authorYou, Shuzhen
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorNguyen, Duy
dc.contributor.authorVan Huylenbroeck, Stefaan
dc.contributor.authorSibaja-Hernandez, Arturo
dc.contributor.authorVenegas, Rafael
dc.contributor.authorLoo, Roger
dc.contributor.authorDe Meyer, Kristin
dc.date.accessioned2021-10-20T19:23:11Z
dc.date.available2021-10-20T19:23:11Z
dc.date.issued2012
dc.identifier.issn0040-6090
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/21896
dc.sourceIIOimport
dc.titleArsenic-doped Ge-spiked monoemitter SiGe:C heterojunction bipolar transistors by low-temperature trisilane based chemical vapor deposition
dc.typeJournal article
dc.contributor.imecauthorYou, Shuzhen
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.imecauthorVan Huylenbroeck, Stefaan
dc.contributor.imecauthorSibaja-Hernandez, Arturo
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.contributor.orcidimecVan Huylenbroeck, Stefaan::0000-0001-9978-3575
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage3345
dc.source.endpage3348
dc.source.journalThin Solid Films
dc.source.issue8
dc.source.volume520
imec.availabilityPublished - open access


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