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Lifetime investigation of Si3N4/Al2O3 as gate dielectric for AlGaN/GaN MIS-HEMTs studied with Time Dependent Dielectric Breakdown

dc.contributor.authorZahid, Mohammed
dc.contributor.authorMarcon, Denis
dc.contributor.authorVan Hove, Marleen
dc.contributor.authorWu, Tian-Li
dc.contributor.authorDecoutere, Stefaan
dc.date.accessioned2021-10-20T19:28:11Z
dc.date.available2021-10-20T19:28:11Z
dc.date.issued2012
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/21905
dc.sourceIIOimport
dc.titleLifetime investigation of Si3N4/Al2O3 as gate dielectric for AlGaN/GaN MIS-HEMTs studied with Time Dependent Dielectric Breakdown
dc.typeMeeting abstract
dc.contributor.imecauthorMarcon, Denis
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.source.peerreviewno
dc.source.conferenceWorkshop on Compound Semiconductor Devices and Integrated Circuits - WOCSDICE
dc.source.conferencedate28/05/2012
dc.source.conferencelocationIsland of Porquerolles France
imec.availabilityPublished - imec


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