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Physical mechanisms of charge pumping and DCIV currents in floating-body SOI MOSFETs

dc.contributor.authorZhang, E. X.
dc.contributor.authorFleetwood, D. M.
dc.contributor.authorSchrimpf, D.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorLinten, Dimitri
dc.date.accessioned2021-10-20T19:31:56Z
dc.date.available2021-10-20T19:31:56Z
dc.date.issued2012-10
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/21912
dc.sourceIIOimport
dc.titlePhysical mechanisms of charge pumping and DCIV currents in floating-body SOI MOSFETs
dc.typeMeeting abstract
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage2641
dc.source.conferenceECS Fall Meeting Symposium E6: high Purity Silicon 12
dc.source.conferencedate7/10/2012
dc.source.conferencelocationHonolulu, HI Hawaii
imec.availabilityPublished - open access
imec.internalnotesECS Meeting Abstracts; Vol. MA2012-02


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