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Design and optical characterization of novel InGaN/GaN multiple quantum wells structures by metal organic vapor phase epitaxy

dc.contributor.authorZhang, Liyang
dc.contributor.authorCheng, Kai
dc.contributor.authorLiang, Hu
dc.contributor.authorLieten, Ruben
dc.contributor.authorLatkowska, Magdalena
dc.contributor.authorBaranowski, Michal
dc.contributor.authorKudrawiec, Robert
dc.contributor.authorMisiewicz, Jan
dc.contributor.authorDekoster, Johan
dc.contributor.authorBorghs, Gustaaf
dc.date.accessioned2021-10-20T19:36:12Z
dc.date.available2021-10-20T19:36:12Z
dc.date.issued2012
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/21920
dc.sourceIIOimport
dc.titleDesign and optical characterization of novel InGaN/GaN multiple quantum wells structures by metal organic vapor phase epitaxy
dc.typeOral presentation
dc.contributor.imecauthorLiang, Hu
dc.contributor.imecauthorLieten, Ruben
dc.contributor.imecauthorDekoster, Johan
dc.contributor.imecauthorBorghs, Gustaaf
dc.source.peerreviewno
dc.source.conferenceInternational Workshop on Nitride Semiconductors - IWN
dc.source.conferencedate14/10/2012
dc.source.conferencelocationSapporo Japan
imec.availabilityPublished - imec


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