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Electron barrier height at CuxTe1-x/Al2O3 interfaces of conducting bridgememory stacks

dc.contributor.authorAfanasiev, Valeri
dc.contributor.authorDe Stefano, Francesca
dc.contributor.authorHoussa, Michel
dc.contributor.authorStesmans, Andre
dc.contributor.authorGoux, Ludovic
dc.contributor.authorOpsomer, Karl
dc.contributor.authorKittl, Jorge
dc.contributor.authorJurczak, Gosia
dc.date.accessioned2021-10-21T06:42:04Z
dc.date.available2021-10-21T06:42:04Z
dc.date.issued2013
dc.identifier.issn0040-6090
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/21952
dc.sourceIIOimport
dc.titleElectron barrier height at CuxTe1-x/Al2O3 interfaces of conducting bridgememory stacks
dc.typeJournal article
dc.contributor.imecauthorAfanasiev, Valeri
dc.contributor.imecauthorDe Stefano, Francesca
dc.contributor.imecauthorHoussa, Michel
dc.contributor.imecauthorStesmans, Andre
dc.contributor.imecauthorGoux, Ludovic
dc.contributor.imecauthorOpsomer, Karl
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.orcidimecHoussa, Michel::0000-0003-1844-3515
dc.contributor.orcidimecGoux, Ludovic::0000-0002-1276-2278
dc.source.peerreviewyes
dc.source.beginpage34
dc.source.endpage37
dc.source.journalThin Solid Films
dc.source.volume533
imec.availabilityPublished - imec
imec.internalnotesEMRS 2012 Symposium L


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