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High-resolution electron spin resonance analysis of ion bombardment induced defects in advanced low-k insulators (k=2.0-2.5)

dc.contributor.authorAfanasiev, Valeri
dc.contributor.authorNguyen, A.
dc.contributor.authorHoussa, M.
dc.contributor.authorStesmans, Andre
dc.contributor.authorTokei, Zsolt
dc.contributor.authorBaklanov, Mikhaïl
dc.date.accessioned2021-10-21T06:42:05Z
dc.date.available2021-10-21T06:42:05Z
dc.date.issued2013
dc.identifier.issn0003-6951
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/21953
dc.sourceIIOimport
dc.titleHigh-resolution electron spin resonance analysis of ion bombardment induced defects in advanced low-k insulators (k=2.0-2.5)
dc.typeJournal article
dc.contributor.imecauthorAfanasiev, Valeri
dc.contributor.imecauthorStesmans, Andre
dc.contributor.imecauthorTokei, Zsolt
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage172908
dc.source.journalApplied Physics Letters
dc.source.issue17
dc.source.volume102
dc.identifier.urlhttp://apl.aip.org/resource/1/applab/v102/i17/p172908_s1
imec.availabilityPublished - open access


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