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Impact of the channel thickness on the performance of the ultrathin InGaAs channel MOSFET devices

dc.contributor.authorAlian, AliReza
dc.contributor.authorPourghaderi, Mohammad Ali
dc.contributor.authorMols, Yves
dc.contributor.authorCantoro, Mirco
dc.contributor.authorIvanov, Tsvetan
dc.contributor.authorCollaert, Nadine
dc.contributor.authorThean, Aaron
dc.date.accessioned2021-10-21T06:42:18Z
dc.date.available2021-10-21T06:42:18Z
dc.date.issued2013
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/21964
dc.sourceIIOimport
dc.titleImpact of the channel thickness on the performance of the ultrathin InGaAs channel MOSFET devices
dc.typeProceedings paper
dc.contributor.imecauthorAlian, AliReza
dc.contributor.imecauthorMols, Yves
dc.contributor.imecauthorIvanov, Tsvetan
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorThean, Aaron
dc.contributor.orcidimecIvanov, Tsvetan::0000-0003-3407-2742
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage437
dc.source.endpage440
dc.source.conferenceInternational Electron Devices Meeting - IEDM
dc.source.conferencedate9/12/2013
dc.source.conferencelocationWashington, DC USA
imec.availabilityPublished - open access


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