Show simple item record

dc.contributor.authorAoulaiche, Marc
dc.contributor.authorFederico, Antonio
dc.contributor.authorSimoen, Eddy
dc.contributor.authorRitzenthaler, Romain
dc.contributor.authorSchram, Tom
dc.contributor.authorArimura, Hiroaki
dc.contributor.authorCho, Moon Ju
dc.contributor.authorKauerauf, Thomas
dc.contributor.authorCrupi, Felice
dc.contributor.authorSpessot, Alessio
dc.contributor.authorCaillat, Christian
dc.contributor.authorFazan, Pierre
dc.contributor.authorNa, Hoon Joo
dc.contributor.authorSon, Yunik
dc.contributor.authorNoh, Kyung Bong
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorThean, Aaron
dc.date.accessioned2021-10-21T06:42:41Z
dc.date.available2021-10-21T06:42:41Z
dc.date.issued2013
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/21978
dc.sourceIIOimport
dc.titleImpact of Al2O3 position on performances and reliability in high-k metal gated DRAM periphery transistors
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorRitzenthaler, Romain
dc.contributor.imecauthorSchram, Tom
dc.contributor.imecauthorArimura, Hiroaki
dc.contributor.imecauthorSpessot, Alessio
dc.contributor.imecauthorFazan, Pierre
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.imecauthorThean, Aaron
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecRitzenthaler, Romain::0000-0002-8615-3272
dc.contributor.orcidimecSchram, Tom::0000-0003-1533-7055
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage190
dc.source.endpage193
dc.source.conference43rd European Solid-State Device Research Conference - ESSDERC
dc.source.conferencedate16/09/2013
dc.source.conferencelocationBucharest Romania
imec.availabilityPublished - open access


Files in this item

Thumbnail

This item appears in the following collection(s)

Show simple item record